BLF4G20-110B

Part Number: BLF4G20-110B

SKU: 332728

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors LDMOS TNS

Rohs State: Need to verify

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Availability: 11850 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	12 A
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	90 mOhms
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	LDMOST-3
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Fall Time	31 ns
Height	4.72 mm
Length	20.02 mm
Product Type	RF MOSFET Transistors
Rise Time	22 ns
Standard Pack Quantity	20
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	15 V
Width	9.91 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
ECCN	EAR99
MACRO NEO Part Number	BLF4G20-110B,112
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	12 A
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	90 mOhms
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	LDMOST-3
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Fall Time	31 ns
Height	4.72 mm
Length	20.02 mm
Product Type	RF MOSFET Transistors
Rise Time	22 ns
Standard Pack Quantity	20
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	15 V
Width	9.91 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
ECCN	EAR99
MACRO NEO Part Number	BLF4G20-110B,112
USHTS	8541290075

BLF4G20-110B

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