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BLF4G20LS-110B

Part Number: BLF4G20LS-110B
SKU: 269225
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors LDMOS TNS
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 29636 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 12 A
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 90 mOhms
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape LDMOST-3
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Fall Time 32 ns
Height 4.72 mm
Length 20.7 mm
Product Type RF MOSFET Transistors
Rise Time 22 ns
Standard Pack Quantity 20
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 15 V
Width 9.91 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
ECCN EAR99
MACRO NEO Part Number BLF4G20LS-110B,112
USHTS 8541290075
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  • BLF4G20LS-110B RF MOSFET Transistors
  • BLF4G20LS-110B NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 12 A
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 90 mOhms
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape LDMOST-3
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Fall Time 32 ns
Height 4.72 mm
Length 20.7 mm
Product Type RF MOSFET Transistors
Rise Time 22 ns
Standard Pack Quantity 20
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 15 V
Width 9.91 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
ECCN EAR99
MACRO NEO Part Number BLF4G20LS-110B,112
USHTS 8541290075
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