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BLF6G10LS-135R /T3

Part Number: BLF6G10LS-135R /T3
SKU: 192375
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors LDMOS TNS
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 80317 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 32 A
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 100 mOhms
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT502B
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.72 mm
Length 20.7 mm
Product Type RF MOSFET Transistors
Standard Pack Quantity 100
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 13 V
Width 9.91 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
ECCN EAR99
MACRO NEO Part Number BLF6G10LS-135R,118
USHTS 8541290075
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  • BLF6G10LS-135R /T3 RF MOSFET Transistors
  • BLF6G10LS-135R /T3 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 32 A
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 100 mOhms
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT502B
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.72 mm
Length 20.7 mm
Product Type RF MOSFET Transistors
Standard Pack Quantity 100
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 13 V
Width 9.91 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
ECCN EAR99
MACRO NEO Part Number BLF6G10LS-135R,118
USHTS 8541290075
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