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BLF6G20LS-110 /T3

Part Number: BLF6G20LS-110 /T3
SKU: 10831
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors LDMOS TNS
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 90389 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 29 A
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 160 mOhms
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT502B
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.72 mm
Length 20.7 mm
Product Type RF MOSFET Transistors
Standard Pack Quantity 100
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 13 V
Width 9.91 mm
CNHTS 8541290000
TARIC 8541290000
ECCN EAR99
MACRO NEO Part Number BLF6G20LS-110,118
USHTS 8541290075
  • BLF6G20LS-110 /T3 Price
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  • BLF6G20LS-110 /T3 RF MOSFET Transistors
  • BLF6G20LS-110 /T3 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 29 A
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 160 mOhms
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT502B
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.72 mm
Length 20.7 mm
Product Type RF MOSFET Transistors
Standard Pack Quantity 100
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 13 V
Width 9.91 mm
CNHTS 8541290000
TARIC 8541290000
ECCN EAR99
MACRO NEO Part Number BLF6G20LS-110,118
USHTS 8541290075
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