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Part Number: MRF18060ALR3
SKU: 33952
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors 60W GSM 1.8GHZ
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 14035 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 1.8 GHz
Gain 13 dB
Output Power 60 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-780-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.32 mm
Length 34.16 mm
Power Dissipation 180 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 4 V
Width 9.91 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.226635 oz
USHTS 8541290075
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 1.8 GHz
Gain 13 dB
Output Power 60 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-780-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.32 mm
Length 34.16 mm
Power Dissipation 180 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 4 V
Width 9.91 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.226635 oz
USHTS 8541290075
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