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Part Number: MRF18085ALSR3
SKU: 115161
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors RF POWER LDMOS NI-780LS
Rohs State: Need to verify
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Availability: 61363 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 1.88 GHz
Gain 15 dB
Output Power 85 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-780S-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.32 mm
Length 20.7 mm
Power Dissipation 273 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 4 V
Width 9.91 mm
CNHTS 8542319000
TARIC 8542319000
MXHTS 8542310399
ECCN 5A991
Per Pcs Weight 0.168010 oz
USHTS 8542310001
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 1.88 GHz
Gain 15 dB
Output Power 85 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-780S-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.32 mm
Length 20.7 mm
Power Dissipation 273 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 4 V
Width 9.91 mm
CNHTS 8542319000
TARIC 8542319000
MXHTS 8542310399
ECCN 5A991
Per Pcs Weight 0.168010 oz
USHTS 8542310001
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