MRF19125R3

Part Number: MRF19125R3

SKU: 125411

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors RF POWER LDMOS NI880

Rohs State: Need to verify

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Availability: 29532 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	1.93 GHz
Gain	13.6 dB
Output Power	24 W
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-880-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	5.08 mm
Length	34.16 mm
Power Dissipation	330 W
Product Type	RF MOSFET Transistors
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	13.8 mm
TARIC	8541290000
Per Pcs Weight	0.343346 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	1.93 GHz
Gain	13.6 dB
Output Power	24 W
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-880-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	5.08 mm
Length	34.16 mm
Power Dissipation	330 W
Product Type	RF MOSFET Transistors
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	13.8 mm
TARIC	8541290000
Per Pcs Weight	0.343346 oz
USHTS	8541290075

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