MRF21010LR1

Part Number: MRF21010LR1

SKU: 119721

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors 10W 28V 2.2GHZ NI360L

Rohs State: Need to verify

Free Sample Request: Request Free Samples

Availability: 34396 in stock

Delivery Date: 4-7 days

Call for pricing

Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	2.1 GHz
Gain	13.5 dB
Output Power	2.1 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-360-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	4.45 mm
Length	20.45 mm
Power Dissipation	43.75 W
Product Type	RF MOSFET Transistors
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	5.92 mm
TARIC	8541290000
Per Pcs Weight	0.103628 oz
USHTS	8541290075

Your name

Your email

Enquiry

Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	2.1 GHz
Gain	13.5 dB
Output Power	2.1 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-360-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	4.45 mm
Length	20.45 mm
Power Dissipation	43.75 W
Product Type	RF MOSFET Transistors
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	5.92 mm
TARIC	8541290000
Per Pcs Weight	0.103628 oz
USHTS	8541290075

Request For MRF21010LR1