MRF21010LSR1

Part Number: MRF21010LSR1

SKU: 289994

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors 10W 28V 2.1 GHZ LDMOS

Rohs State: Need to verify

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Availability: 89440 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	2.1 GHz
Gain	13.5 dB
Output Power	2.1 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-360S-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	3.94 mm
Length	9.78 mm
Power Dissipation	43.75 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	500
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	5.97 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.031651 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	2.1 GHz
Gain	13.5 dB
Output Power	2.1 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-360S-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	3.94 mm
Length	9.78 mm
Power Dissipation	43.75 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	500
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	5.97 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.031651 oz
USHTS	8541290075

MRF21010LSR1

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