MRF21030LR3

Part Number: MRF21030LR3

SKU: 44186

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors 30W 2.2GHZ LDMOS NI400L

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 75418 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	2 GHz to 2.2 GHz
Gain	14 dB
Output Power	3.5 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package/Case	NI-400-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	4.14 mm
Length	20.44 mm
Power Dissipation	83.3 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	250
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	9.9 mm
CNHTS	8542319000
USHTS	8542310001
MXHTS	8542310399
ECCN	5A991
Per Pcs Weight	3,698 g
TARIC	8542319000

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	2 GHz to 2.2 GHz
Gain	14 dB
Output Power	3.5 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package/Case	NI-400-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	4.14 mm
Length	20.44 mm
Power Dissipation	83.3 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	250
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	9.9 mm
CNHTS	8542319000
USHTS	8542310001
MXHTS	8542310399
ECCN	5A991
Per Pcs Weight	3,698 g
TARIC	8542319000

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