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MRF21060SR3

Part Number: MRF21060SR3
SKU: 54351
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors
Rohs State: Need to verify
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Availability: 9526 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 2.1 GHz to 2.2 GHz
Gain 12.5 dB
Output Power 6 W
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package/Case NI-780S-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.32 mm
Length 20.7 mm
Power Dissipation 180 W
Product Type RF MOSFET Transistors
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 4 V
Width 9.91 mm
USHTS 8541290075
Per Pcs Weight 4,743 g
TARIC 8541290000
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 2.1 GHz to 2.2 GHz
Gain 12.5 dB
Output Power 6 W
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package/Case NI-780S-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.32 mm
Length 20.7 mm
Power Dissipation 180 W
Product Type RF MOSFET Transistors
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 4 V
Width 9.91 mm
USHTS 8541290075
Per Pcs Weight 4,743 g
TARIC 8541290000
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