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Part Number: MRF21125SR3
SKU: 326364
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors RF PWR LDMOS TRANS
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 46199 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 2.11 GHz to 2.17 GHz
Gain 13 dB
Output Power 20 W
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-880S-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 5.08 mm
Length 23.24 mm
Power Dissipation 330 W
Product Type RF MOSFET Transistors
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 4 V
Width 13.8 mm
TARIC 8541290000
Per Pcs Weight 0.238367 oz
USHTS 8541290075
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 2.11 GHz to 2.17 GHz
Gain 13 dB
Output Power 20 W
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-880S-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 5.08 mm
Length 23.24 mm
Power Dissipation 330 W
Product Type RF MOSFET Transistors
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 4 V
Width 13.8 mm
TARIC 8541290000
Per Pcs Weight 0.238367 oz
USHTS 8541290075
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