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MRF284LSR1

Part Number: MRF284LSR1
SKU: 233153
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 40674 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 1 GHz to 2.6 GHz
Gain 9 dB
Output Power 30 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-360S-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 3.94 mm
Length 9.78 mm
Power Dissipation 87.5 W
Product Type RF MOSFET Transistors
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Width 5.97 mm
TARIC 8541290000
Per Pcs Weight 0.031651 oz
USHTS 8541290075
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  • MRF284LSR1 RF MOSFET Transistors
  • MRF284LSR1 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 1 GHz to 2.6 GHz
Gain 9 dB
Output Power 30 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-360S-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 3.94 mm
Length 9.78 mm
Power Dissipation 87.5 W
Product Type RF MOSFET Transistors
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Width 5.97 mm
TARIC 8541290000
Per Pcs Weight 0.031651 oz
USHTS 8541290075
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