MRF373ALR1

Part Number: MRF373ALR1

SKU: 303145

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors 75W 860MHZ LDMOS NI360L

Rohs State: Need to verify

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Availability: 48955 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	70 V
Operating Frequency	0.47 GHz to 0.86 GHz
Gain	18.2 dB
Output Power	75 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-360-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	2.8 mm
Length	9.27 mm
Power Dissipation	197 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	500
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	5.97 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.103628 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	70 V
Operating Frequency	0.47 GHz to 0.86 GHz
Gain	18.2 dB
Output Power	75 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-360-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	2.8 mm
Length	9.27 mm
Power Dissipation	197 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	500
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	4 V
Width	5.97 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.103628 oz
USHTS	8541290075

MRF373ALR1

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