MRF5S19100HSR3

Part Number: MRF5S19100HSR3

SKU: 84798

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors HV5 LDMOS NI780HS

Rohs State: Need to verify

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Availability: 76092 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	1.9 GHz to 2 GHz
Gain	13.9 dB
Output Power	22 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-780S-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	4.32 mm
Length	20.7 mm
Power Dissipation	269 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	250
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	2.7 V
Width	9.91 mm
CNHTS	8542319000
TARIC	8542319000
ECCN	5A991
Per Pcs Weight	0.167294 oz
USHTS	8542310001

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	1.9 GHz to 2 GHz
Gain	13.9 dB
Output Power	22 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-780S-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	4.32 mm
Length	20.7 mm
Power Dissipation	269 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	250
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	2.7 V
Width	9.91 mm
CNHTS	8542319000
TARIC	8542319000
ECCN	5A991
Per Pcs Weight	0.167294 oz
USHTS	8542310001

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