MRF5S19130HR3

Part Number: MRF5S19130HR3

SKU: 205516

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors HV5 28V 26W WCDMA NI880H

Rohs State: Need to verify

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Availability: 27405 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	1.9 GHz to 2 GHz
Gain	13 dB
Output Power	26 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-880-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	5.08 mm
Length	34.16 mm
Power Dissipation	438 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	250
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	3.5 V
Width	13.8 mm
CNHTS	8542319000
TARIC	8542319000
ECCN	5A991

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	1.9 GHz to 2 GHz
Gain	13 dB
Output Power	26 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-880-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	5.08 mm
Length	34.16 mm
Power Dissipation	438 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	250
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	3.5 V
Width	13.8 mm
CNHTS	8542319000
TARIC	8542319000
ECCN	5A991

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