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MRF5S19150HR3

Part Number: MRF5S19150HR3
SKU: 165478
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors HV5 32W N/CDMA
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 28789 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 1.9 GHz to 2 GHz
Gain 14 dB
Output Power 32 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-880-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 5.08 mm
Length 34.16 mm
Power Dissipation 427 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Width 13.8 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN 5A991
Per Pcs Weight 0.343346 oz
USHTS 8541290075
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 1.9 GHz to 2 GHz
Gain 14 dB
Output Power 32 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-880-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 5.08 mm
Length 34.16 mm
Power Dissipation 427 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Width 13.8 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN 5A991
Per Pcs Weight 0.343346 oz
USHTS 8541290075
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