0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

MRF5S21045NR1

Part Number: MRF5S21045NR1
SKU: 215815
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors 2170MHZ 10W
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 43411 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.11 GHz to 2.17 GHz
Gain 14.5 dB
Output Power 10 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape TO-270-4
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 2.64 mm
Length 17.58 mm
Moisture Sensitive Yes
Power Dissipation 130 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Width 9.07 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.058073 oz
USHTS 8541290075
  • MRF5S21045NR1 Price
  • MRF5 Series
  • MRF5S21045NR1 Datasheet
  • MRF5S21045NR1 Application
  • MRF5S21045NR1 Pdf
  • MRF5S21045NR1 Pinout
  • MRF5S21045NR1 Image
  • MRF5S21045NR1 Picture
  • MRF5S21045NR1 In Stock
  • MRF5S21045NR1 Distributor
  • MRF5S21045NR1 RF MOSFET Transistors
  • MRF5S21045NR1 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.11 GHz to 2.17 GHz
Gain 14.5 dB
Output Power 10 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape TO-270-4
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 2.64 mm
Length 17.58 mm
Moisture Sensitive Yes
Power Dissipation 130 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Width 9.07 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.058073 oz
USHTS 8541290075
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display