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MRF5S9101NR1

Part Number: MRF5S9101NR1
SKU: 64538
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors 100W 900MHZ26V
Rohs State: Need to verify
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Availability: 22896 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 700 mA
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 0.86 GHz to 0.96 GHz
Gain 17.5 dB
Output Power 100 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape TO-270-4
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 2.64 mm
Length 17.58 mm
Moisture Sensitive Yes
Power Dissipation 427 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Width 9.07 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.058073 oz
USHTS 8541290075
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 700 mA
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 0.86 GHz to 0.96 GHz
Gain 17.5 dB
Output Power 100 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape TO-270-4
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 2.64 mm
Length 17.58 mm
Moisture Sensitive Yes
Power Dissipation 427 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Width 9.07 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.058073 oz
USHTS 8541290075
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