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MRF6P23190HR6

Part Number: MRF6P23190HR6
SKU: 109653
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors HV6 2.3GHZ 40W
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 22758 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.3 GHz to 2.4 GHz
Gain 14 dB
Output Power 40 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-1230-5
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Dual
Height 5.08 mm
Length 41.28 mm
Product Type RF MOSFET Transistors
Standard Pack Quantity 150
Product Group MOSFETs
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 10.29 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.465355 oz
USHTS 8541290075
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  • MRF6P23190HR6 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.3 GHz to 2.4 GHz
Gain 14 dB
Output Power 40 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-1230-5
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Dual
Height 5.08 mm
Length 41.28 mm
Product Type RF MOSFET Transistors
Standard Pack Quantity 150
Product Group MOSFETs
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 10.29 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.465355 oz
USHTS 8541290075
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