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MRF6S18100NBR1

Part Number: MRF6S18100NBR1
SKU: 145439
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors 1990MHZ 28V
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 54688 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 1.8 GHz to 2 GHz
Gain 14.5 dB
Output Power 100 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package/Case TO-272-4
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 2.64 mm
Length 23.67 mm
Moisture Sensitive Yes
Power Dissipation 343 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 9.07 mm
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290075
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 2 g
TARIC 8541290000
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  • MRF6S18100NBR1 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 1.8 GHz to 2 GHz
Gain 14.5 dB
Output Power 100 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package/Case TO-272-4
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 2.64 mm
Length 23.67 mm
Moisture Sensitive Yes
Power Dissipation 343 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 9.07 mm
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290075
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 2 g
TARIC 8541290000
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