MRF6S19100HR3

Part Number: MRF6S19100HR3

SKU: 328309

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors HV6 WCDMA 22W NI780H

Rohs State: Need to verify

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Availability: 17350 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	68 V
Operating Frequency	1.93 GHz to 1.99 GHz
Gain	16.1 dB
Output Power	22 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-780-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	4.32 mm
Length	34.16 mm
Power Dissipation	398 W
Product Type	RF MOSFET Transistors
Series	MRF6S19100H
Standard Pack Quantity	250
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage	3 V
Width	9.91 mm
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.226635 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	68 V
Operating Frequency	1.93 GHz to 1.99 GHz
Gain	16.1 dB
Output Power	22 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-780-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	4.32 mm
Length	34.16 mm
Power Dissipation	398 W
Product Type	RF MOSFET Transistors
Series	MRF6S19100H
Standard Pack Quantity	250
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage	3 V
Width	9.91 mm
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.226635 oz
USHTS	8541290075

MRF6S19100HR3

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