MRF6S20010N

Part Number: MRF6S20010N

SKU: 254818

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 618 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	68 V
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	TO-270
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	2.08 mm
Length	9.7 mm
Product Type	RF MOSFET Transistors
Product Group	MOSFETs
Vgs - Gate-Source Voltage	- 0.5 V, 12 V
Width	6.15 mm
TARIC	8541290000
ECCN	EAR99
Per Pcs Weight	0.019330 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	68 V
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	TO-270
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	2.08 mm
Length	9.7 mm
Product Type	RF MOSFET Transistors
Product Group	MOSFETs
Vgs - Gate-Source Voltage	- 0.5 V, 12 V
Width	6.15 mm
TARIC	8541290000
ECCN	EAR99
Per Pcs Weight	0.019330 oz
USHTS	8541290075

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