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MRF6S21050L

Part Number: MRF6S21050L
SKU: 264918
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 65162 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.11 GHz to 2.17 GHz
Gain 16 dB
Output Power 11.5 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package/Case NI-400-3
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 3 mm
Length 10.3 mm
Power Dissipation 151 W
Product Type RF MOSFET Transistors
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 9.9 mm
USHTS 8541290075
Per Pcs Weight 3,698 g
TARIC 8541290000
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.11 GHz to 2.17 GHz
Gain 16 dB
Output Power 11.5 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package/Case NI-400-3
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 3 mm
Length 10.3 mm
Power Dissipation 151 W
Product Type RF MOSFET Transistors
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 9.9 mm
USHTS 8541290075
Per Pcs Weight 3,698 g
TARIC 8541290000
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