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MRF6S21050LR3

Part Number: MRF6S21050LR3
SKU: 18378
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors HV6 W-CDMA 11.5W NI400L
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 24351 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.11 GHz to 2.17 GHz
Gain 16 dB
Output Power 11.5 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-400-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 3 mm
Length 10.3 mm
Power Dissipation 151 W
Product Type RF MOSFET Transistors
Series MRF6S21050L
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 9.9 mm
CNHTS 8542319000
TARIC 8542319000
MXHTS 8542310399
ECCN EAR99
Per Pcs Weight 0.130369 oz
USHTS 8542310001
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  • MRF6S21050LR3 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.11 GHz to 2.17 GHz
Gain 16 dB
Output Power 11.5 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-400-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 3 mm
Length 10.3 mm
Power Dissipation 151 W
Product Type RF MOSFET Transistors
Series MRF6S21050L
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 9.9 mm
CNHTS 8542319000
TARIC 8542319000
MXHTS 8542310399
ECCN EAR99
Per Pcs Weight 0.130369 oz
USHTS 8542310001
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