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MRF6S23100H

Part Number: MRF6S23100H
SKU: 38449
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 55038 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.3 GHz to 2.4 GHz
Gain 15.4 dB
Output Power 20 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-780-3
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.32 mm
Length 34.16 mm
Power Dissipation 330 W
Product Type RF MOSFET Transistors
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 9.91 mm
TARIC 8541290000
Per Pcs Weight 0.226635 oz
USHTS 8541290075
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.3 GHz to 2.4 GHz
Gain 15.4 dB
Output Power 20 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-780-3
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.32 mm
Length 34.16 mm
Power Dissipation 330 W
Product Type RF MOSFET Transistors
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 9.91 mm
TARIC 8541290000
Per Pcs Weight 0.226635 oz
USHTS 8541290075
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