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MRF6S23100HSR3

Part Number: MRF6S23100HSR3
SKU: 199866
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors HV6 2.3GHZ 20W
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 88640 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.3 GHz to 2.4 GHz
Gain 15.4 dB
Output Power 20 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-780S-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.32 mm
Length 20.7 mm
Power Dissipation 330 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 9.91 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN 5A991
Per Pcs Weight 0.168010 oz
USHTS 8541290075
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  • MRF6S23100HSR3 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2.3 GHz to 2.4 GHz
Gain 15.4 dB
Output Power 20 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-780S-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.32 mm
Length 20.7 mm
Power Dissipation 330 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 9.91 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN 5A991
Per Pcs Weight 0.168010 oz
USHTS 8541290075
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