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Part Number: MRF6VP2600HR5
SKU: 48687
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors VHV6 600W 225MHZ NI1230
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 72107 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 110 V
Operating Frequency 500 MHz
Gain 25.3 dB
Output Power 600 W
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-1230
Package Style Reel
Brand NXP Semiconductors
Configuration Dual
Height 5.08 mm
Length 41.28 mm
Product Type RF MOSFET Transistors
Series MRF6VP2600H
Standard Pack Quantity 50
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 10.29 mm
MACRO NEO Part Number 935319433178
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.464036 oz
USHTS 8541290075
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 110 V
Operating Frequency 500 MHz
Gain 25.3 dB
Output Power 600 W
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-1230
Package Style Reel
Brand NXP Semiconductors
Configuration Dual
Height 5.08 mm
Length 41.28 mm
Product Type RF MOSFET Transistors
Series MRF6VP2600H
Standard Pack Quantity 50
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 3 V
Width 10.29 mm
MACRO NEO Part Number 935319433178
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.464036 oz
USHTS 8541290075
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