MRF9060LSR1

Part Number: MRF9060LSR1

SKU: 48689

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors 60W 945MHZ NI360S LOW AU

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 27338 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	1 GHz
Gain	17 dB
Output Power	60 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-360S-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	3.94 mm
Length	9.78 mm
Power Dissipation	219 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	500
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	2.9 V
Width	5.97 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
ECCN	5A991
Per Pcs Weight	0.031651 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	1 GHz
Gain	17 dB
Output Power	60 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-360S-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	3.94 mm
Length	9.78 mm
Power Dissipation	219 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	500
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 15 V
Vgs th - Gate-Source Threshold Voltage	2.9 V
Width	5.97 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
ECCN	5A991
Per Pcs Weight	0.031651 oz
USHTS	8541290075

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