MRFE6S9060NR1

Part Number: MRFE6S9060NR1

SKU: 330885

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors HV6E 60W TO270-2N FET

Rohs State: Need to verify

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Availability: 33014 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	66 V
Operating Frequency	1 GHz
Gain	21.1 dB
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	TO-270
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	2.08 mm
Length	9.7 mm
Moisture Sensitive	Yes
Product Type	RF MOSFET Transistors
Series	MRFE6S9060NR1
Standard Pack Quantity	500
Product Group	MOSFETs
Vgs - Gate-Source Voltage	- 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage	2.2 V
Width	6.15 mm
MACRO NEO Part Number	935309637528
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.018679 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	66 V
Operating Frequency	1 GHz
Gain	21.1 dB
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	TO-270
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	2.08 mm
Length	9.7 mm
Moisture Sensitive	Yes
Product Type	RF MOSFET Transistors
Series	MRFE6S9060NR1
Standard Pack Quantity	500
Product Group	MOSFETs
Vgs - Gate-Source Voltage	- 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage	2.2 V
Width	6.15 mm
MACRO NEO Part Number	935309637528
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.018679 oz
USHTS	8541290075

MRFE6S9060NR1

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