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MRFE6VP61K25HR6

Part Number: MRFE6VP61K25HR6
SKU: 28510
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 25079 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 10 uA
Vds - Drain-Source Breakdown Voltage 133 V
Operating Frequency 1.8 MHz, 600 MHz
Gain 24 dB
Output Power 1.25 kW
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-1230
Package Style Reel
Brand NXP Semiconductors
Configuration Single
Power Dissipation 1.333 kW
Product Type RF MOSFET Transistors
Series MRFE6VP61K25H
Standard Pack Quantity 150
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2.2 V
MACRO NEO Part Number 935314411128
CNHTS 8517709000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.464036 oz
USHTS 8541290075
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 10 uA
Vds - Drain-Source Breakdown Voltage 133 V
Operating Frequency 1.8 MHz, 600 MHz
Gain 24 dB
Output Power 1.25 kW
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-1230
Package Style Reel
Brand NXP Semiconductors
Configuration Single
Power Dissipation 1.333 kW
Product Type RF MOSFET Transistors
Series MRFE6VP61K25H
Standard Pack Quantity 150
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2.2 V
MACRO NEO Part Number 935314411128
CNHTS 8517709000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.464036 oz
USHTS 8541290075
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