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Part Number: MRFE6VP8600HR5
SKU: 264764
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors VHV6 600W NI1230H 50V
Rohs State: Need to verify
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Availability: 20500 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 140 V
Operating Frequency 470 MHz to 860 MHz
Gain 18.8 dB
Output Power 600 W
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-1230
Package Style Reel
Brand NXP Semiconductors
Configuration Dual
Forward Transconductance - Min 15.6 S
Power Dissipation 1.52 kW
Product Type RF MOSFET Transistors
Series MRFE6VP8600H
Standard Pack Quantity 50
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2.07 V
MACRO NEO Part Number 935321656178
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.464343 oz
USHTS 8541290075
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 140 V
Operating Frequency 470 MHz to 860 MHz
Gain 18.8 dB
Output Power 600 W
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-1230
Package Style Reel
Brand NXP Semiconductors
Configuration Dual
Forward Transconductance - Min 15.6 S
Power Dissipation 1.52 kW
Product Type RF MOSFET Transistors
Series MRFE6VP8600H
Standard Pack Quantity 50
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2.07 V
MACRO NEO Part Number 935321656178
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.464343 oz
USHTS 8541290075
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