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Part Number: MRFE6VS25LR5
SKU: 228393
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors VHV6E 25W50V NI360L
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 14127 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 140 V
Operating Frequency 1.8 MHz to 2000 MHz
Gain 25.9 dB
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-360-2
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Product Type RF MOSFET Transistors
Series MRFE6VS25N
Standard Pack Quantity 50
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2 V
MACRO NEO Part Number 935320096178
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.103628 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 140 V
Operating Frequency 1.8 MHz to 2000 MHz
Gain 25.9 dB
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape NI-360-2
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Product Type RF MOSFET Transistors
Series MRFE6VS25N
Standard Pack Quantity 50
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2 V
MACRO NEO Part Number 935320096178
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.103628 oz
USHTS 8541290095
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