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MRFG35003N6AT1

Part Number: MRFG35003N6AT1
SKU: 281847
Manufacturer: NXP Semiconductors
Description: RF JFET Transistors 3.5GHZ 3W 6V GAAS PLD1.5
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 68409 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF JFET Transistors
RoHS RoHS Compliance
Transistor Type pHEMT
Technology GaAs
Operating Frequency 3.55 GHz
Gain 10 dB
Vds - Drain-Source Breakdown Voltage 8 V
Vgs - Gate-Source Breakdown Voltage - 5 V
Id - Continuous Drain Current 2.9 A
Operating Temperature(Max) + 85 C
Mounting Type Style SMD/SMT
Package Shape PLD-1.5
Package Style Reel
Brand NXP Semiconductors
Configuration Single Dual Source
Moisture Sensitive Yes
P1dB - Compression Point 3 W
Product RF JFET
Product Type RF JFET Transistors
Series MRFG35003N6AT1
Standard Pack Quantity 1000
Product Group Transistors
Type GaAs pHEMT
MACRO NEO Part Number 935309639515
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.009877 oz
USHTS 8541290075
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Products specifications
Manufacturer(MFG) NXP
Part Category RF JFET Transistors
RoHS RoHS Compliance
Transistor Type pHEMT
Technology GaAs
Operating Frequency 3.55 GHz
Gain 10 dB
Vds - Drain-Source Breakdown Voltage 8 V
Vgs - Gate-Source Breakdown Voltage - 5 V
Id - Continuous Drain Current 2.9 A
Operating Temperature(Max) + 85 C
Mounting Type Style SMD/SMT
Package Shape PLD-1.5
Package Style Reel
Brand NXP Semiconductors
Configuration Single Dual Source
Moisture Sensitive Yes
P1dB - Compression Point 3 W
Product RF JFET
Product Type RF JFET Transistors
Series MRFG35003N6AT1
Standard Pack Quantity 1000
Product Group Transistors
Type GaAs pHEMT
MACRO NEO Part Number 935309639515
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.009877 oz
USHTS 8541290075
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