0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

MRFG35010ANT1

Part Number: MRFG35010ANT1
SKU: 44208
Manufacturer: NXP Semiconductors
Description: RF JFET Transistors 3.5GHZ 10W GAAS PLD1.5N
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 73061 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) NXP
Part Category RF JFET Transistors
RoHS RoHS Compliance
Transistor Type pHEMT
Technology GaAs
Operating Frequency 3.55 GHz
Gain 10 dB
Vds - Drain-Source Breakdown Voltage 15 V
Vgs - Gate-Source Breakdown Voltage - 5 V
Id - Continuous Drain Current 2.9 A
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape PLD-1.5
Qualification Standard AEC-Q100
Package Style Reel
Brand NXP Semiconductors
Configuration Single Dual Source
Moisture Sensitive Yes
P1dB - Compression Point 9 W
Product RF JFET
Product Type RF JFET Transistors
Series MRFG35010ANT1
Standard Pack Quantity 1000
Product Group Transistors
Type GaAs pHEMT
MACRO NEO Part Number 935313763515
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.009877 oz
USHTS 8541290075
  • MRFG35010ANT1 Price
  • MRFG Series
  • MRFG35010ANT1 Datasheet
  • MRFG35010ANT1 Application
  • MRFG35010ANT1 Pdf
  • MRFG35010ANT1 Pinout
  • MRFG35010ANT1 Image
  • MRFG35010ANT1 Picture
  • MRFG35010ANT1 In Stock
  • MRFG35010ANT1 Distributor
  • MRFG35010ANT1 RF JFET Transistors
  • MRFG35010ANT1 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF JFET Transistors
RoHS RoHS Compliance
Transistor Type pHEMT
Technology GaAs
Operating Frequency 3.55 GHz
Gain 10 dB
Vds - Drain-Source Breakdown Voltage 15 V
Vgs - Gate-Source Breakdown Voltage - 5 V
Id - Continuous Drain Current 2.9 A
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape PLD-1.5
Qualification Standard AEC-Q100
Package Style Reel
Brand NXP Semiconductors
Configuration Single Dual Source
Moisture Sensitive Yes
P1dB - Compression Point 9 W
Product RF JFET
Product Type RF JFET Transistors
Series MRFG35010ANT1
Standard Pack Quantity 1000
Product Group Transistors
Type GaAs pHEMT
MACRO NEO Part Number 935313763515
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.009877 oz
USHTS 8541290075
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display