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MW6S004NT1

Part Number: MW6S004NT1
SKU: 145489
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors HV6 1950MHZ 2W PLD1.5N
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 92933 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2 GHz
Gain 18 dB
Output Power 4 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape PLD-1.5-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 1.83 mm
Length 6.73 mm
Moisture Sensitive Yes
Product Type RF MOSFET Transistors
Series MW6S004NT1
Standard Pack Quantity 1000
Product Group MOSFETs
Vgs - Gate-Source Voltage 12 V
Vgs th - Gate-Source Threshold Voltage 2 V
Width 5.97 mm
MACRO NEO Part Number 935320257515
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.009877 oz
USHTS 8541290075
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 68 V
Operating Frequency 2 GHz
Gain 18 dB
Output Power 4 W
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape PLD-1.5-3
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 1.83 mm
Length 6.73 mm
Moisture Sensitive Yes
Product Type RF MOSFET Transistors
Series MW6S004NT1
Standard Pack Quantity 1000
Product Group MOSFETs
Vgs - Gate-Source Voltage 12 V
Vgs th - Gate-Source Threshold Voltage 2 V
Width 5.97 mm
MACRO NEO Part Number 935320257515
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.009877 oz
USHTS 8541290075
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