0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

MW6S010NR1

Part Number: MW6S010NR1
SKU: 246170
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors HV6 900MHZ 10W TO270-2N
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 94211 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 125 mA
Vds - Drain-Source Breakdown Voltage 68 V
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape TO-270
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Moisture Sensitive Yes
Power Dissipation 61.4 W
Product Type RF MOSFET Transistors
Series MW6S010N
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 2.3 V
MACRO NEO Part Number 935319268528
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.059966 oz
USHTS 8541290075
  • MW6S010NR1 Price
  • MW6S Series
  • MW6S010NR1 Datasheet
  • MW6S010NR1 Application
  • MW6S010NR1 Pdf
  • MW6S010NR1 Pinout
  • MW6S010NR1 Image
  • MW6S010NR1 Picture
  • MW6S010NR1 In Stock
  • MW6S010NR1 Distributor
  • MW6S010NR1 RF MOSFET Transistors
  • MW6S010NR1 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 125 mA
Vds - Drain-Source Breakdown Voltage 68 V
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape TO-270
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Moisture Sensitive Yes
Power Dissipation 61.4 W
Product Type RF MOSFET Transistors
Series MW6S010N
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage 2.3 V
MACRO NEO Part Number 935319268528
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.059966 oz
USHTS 8541290075
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display