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2N5088G

Part Number: 2N5088G
SKU: 198364
Manufacturer: onsemi
Description: Bipolar Transistors - BJT 50mA 35V NPN
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 93139 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) onsemi
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style Through Hole
Package Shape TO-92-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 30 V
Collector- Base Voltage VCBO 35 V
Emitter- Base Voltage VEBO 3 V
Collector-Emitter Saturation Voltage 0.5 V
Maximum DC Collector Current 0.05 A
Power Dissipation 625 W
Gain Bandwidth Product fT 50 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Series 2N5088
Package Style Bulk
Brand onsemi
Continuous Collector Current 0.05 A
DC Collector/Base Gain hfe Min 300
Height 5.33 mm
Length 5.2 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 5000
Product Group Transistors
Material Silicon
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Width 4.19 mm
USHTS 8541210095
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Products specifications
Manufacturer(MFG) onsemi
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style Through Hole
Package Shape TO-92-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 30 V
Collector- Base Voltage VCBO 35 V
Emitter- Base Voltage VEBO 3 V
Collector-Emitter Saturation Voltage 0.5 V
Maximum DC Collector Current 0.05 A
Power Dissipation 625 W
Gain Bandwidth Product fT 50 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Series 2N5088
Package Style Bulk
Brand onsemi
Continuous Collector Current 0.05 A
DC Collector/Base Gain hfe Min 300
Height 5.33 mm
Length 5.2 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 5000
Product Group Transistors
Material Silicon
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Width 4.19 mm
USHTS 8541210095
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