2N5550G

Part Number: 2N5550G

SKU: 338135

Manufacturer: onsemi

Description: Bipolar Transistors - BJT 600mA 160V NPN

Rohs State: Need to verify

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Availability: 69177 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	onsemi
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	Through Hole
Package Shape	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	140 V
Collector- Base Voltage VCBO	160 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	0.25 V
Maximum DC Collector Current	0.6 A
Power Dissipation	625 mW
Gain Bandwidth Product fT	300 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	2N5550
Package Style	Bulk
Brand	onsemi
Continuous Collector Current	0.6 A
DC Collector/Base Gain hfe Min	60
Height	5.33 mm
Length	5.2 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	5000
Product Group	Transistors
Material	Silicon
CNHTS	8541210000
CAHTS	8541210000
JPHTS	8541210101
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Width	4.19 mm
USHTS	8541210095

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Products specifications

Manufacturer(MFG)	onsemi
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	Through Hole
Package Shape	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	140 V
Collector- Base Voltage VCBO	160 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	0.25 V
Maximum DC Collector Current	0.6 A
Power Dissipation	625 mW
Gain Bandwidth Product fT	300 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	2N5550
Package Style	Bulk
Brand	onsemi
Continuous Collector Current	0.6 A
DC Collector/Base Gain hfe Min	60
Height	5.33 mm
Length	5.2 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	5000
Product Group	Transistors
Material	Silicon
CNHTS	8541210000
CAHTS	8541210000
JPHTS	8541210101
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Width	4.19 mm
USHTS	8541210095

2N5550G

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