2N6517RLRA

Part Number: 2N6517RLRA

SKU: 208463

Manufacturer: onsemi

Description: Bipolar Transistors - BJT 500mA 350V NPN

Rohs State: Need to verify

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Availability: 90342 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	onsemi
Part Category	Bipolar Transistors - BJT
RoHS	Non-RoHS
Mounting Type Style	Through Hole
Package Shape	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	350 V
Collector- Base Voltage VCBO	350 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	1 V
Maximum DC Collector Current	0.5 A
Power Dissipation	625 mW
Gain Bandwidth Product fT	200 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Package Style	Reel
Brand	onsemi
Continuous Collector Current	0.5 A
DC Collector/Base Gain hfe Min	20
Height	5.33 mm
Length	5.2 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	2000
Product Group	Transistors
Material	Silicon
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
ECCN	EAR99

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Products specifications

Manufacturer(MFG)	onsemi
Part Category	Bipolar Transistors - BJT
RoHS	Non-RoHS
Mounting Type Style	Through Hole
Package Shape	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	350 V
Collector- Base Voltage VCBO	350 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	1 V
Maximum DC Collector Current	0.5 A
Power Dissipation	625 mW
Gain Bandwidth Product fT	200 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Package Style	Reel
Brand	onsemi
Continuous Collector Current	0.5 A
DC Collector/Base Gain hfe Min	20
Height	5.33 mm
Length	5.2 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	2000
Product Group	Transistors
Material	Silicon
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
ECCN	EAR99

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