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Bipolar Transistors - BJT
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2SA1020
2SA1020
Part Number:
2SA1020
SKU:
59671
Manufacturer:
onsemi
Description:
Bipolar Transistors - BJT 1W High Current PNP
Rohs State:
Need to verify
Free Sample Request:
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Availability:
31855 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
onsemi
Part Category
Bipolar Transistors - BJT
RoHS
Non-RoHS
Mounting Type Style
Through Hole
Package Shape
TO-92-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
0.5 V
Maximum DC Collector Current
2 A
Power Dissipation
900 mW
Gain Bandwidth Product fT
100 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Package Style
Bulk
Brand
onsemi
Continuous Collector Current
2 A
DC Collector/Base Gain hfe Min
70
Height
7.87 mm
Length
5.21 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
5000
Product Group
Transistors
Material
Silicon
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541210000
ECCN
EAR99
Width
4.19 mm
USHTS
8541210095
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2SA1020
Bipolar Transistors - BJT
2SA1020
onsemi
Products specifications
Manufacturer(MFG)
onsemi
Part Category
Bipolar Transistors - BJT
RoHS
Non-RoHS
Mounting Type Style
Through Hole
Package Shape
TO-92-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
0.5 V
Maximum DC Collector Current
2 A
Power Dissipation
900 mW
Gain Bandwidth Product fT
100 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Package Style
Bulk
Brand
onsemi
Continuous Collector Current
2 A
DC Collector/Base Gain hfe Min
70
Height
7.87 mm
Length
5.21 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
5000
Product Group
Transistors
Material
Silicon
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541210000
ECCN
EAR99
Width
4.19 mm
USHTS
8541210095
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