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Bipolar Transistors - BJT
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2SC5347AE-TD-E
2SC5347AE-TD-E
Part Number:
2SC5347AE-TD-E
SKU:
150808
Manufacturer:
onsemi
Description:
Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER
Rohs State:
Need to verify
Free Sample Request:
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Availability:
13607 in stock
Delivery Date:
4-7 days
Call for pricing
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Specifications
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Products specifications
Manufacturer(MFG)
onsemi
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
TO-243-3
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
12 V
Collector- Base Voltage VCBO
20 V
Emitter- Base Voltage VEBO
2 V
Power Dissipation
1.3 W
Gain Bandwidth Product fT
4.7 GHz
Operating Temperature(Max)
+ 150 C
Series
2SC5347A
Package Style
Reel
Brand
onsemi
Continuous Collector Current
150 mA
DC Collector/Base Gain hfe Min
60
DC Current Gain hFE Max
270
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1000
Product Group
Transistors
Material
Silicon
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.001804 oz
USHTS
8541290075
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Bipolar Transistors - BJT
2SC5347AE-TD-E
onsemi
Products specifications
Manufacturer(MFG)
onsemi
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
TO-243-3
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
12 V
Collector- Base Voltage VCBO
20 V
Emitter- Base Voltage VEBO
2 V
Power Dissipation
1.3 W
Gain Bandwidth Product fT
4.7 GHz
Operating Temperature(Max)
+ 150 C
Series
2SC5347A
Package Style
Reel
Brand
onsemi
Continuous Collector Current
150 mA
DC Collector/Base Gain hfe Min
60
DC Current Gain hFE Max
270
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1000
Product Group
Transistors
Material
Silicon
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.001804 oz
USHTS
8541290075
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