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Bipolar Transistors - BJT
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2SC536NG-NPA-AT
2SC536NG-NPA-AT
Part Number:
2SC536NG-NPA-AT
SKU:
160795
Manufacturer:
onsemi
Description:
Bipolar Transistors - BJT BIP NPN 0.15A 50V
Rohs State:
Need to verify
Free Sample Request:
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Availability:
46512 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
onsemi
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
Through Hole
Package Shape
TO-92-3
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
0.3 V
Maximum DC Collector Current
400 mA
Power Dissipation
500 mW
Gain Bandwidth Product fT
200 MHz
Package Style
Reel
Brand
onsemi
Continuous Collector Current
150 mA
DC Collector/Base Gain hfe Min
160
DC Current Gain hFE Max
560
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1500
Product Group
Transistors
Material
Silicon
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.016000 oz
USHTS
8541210075
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2SC536NG-NPA-AT
Bipolar Transistors - BJT
2SC536NG-NPA-AT
onsemi
Products specifications
Manufacturer(MFG)
onsemi
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
Through Hole
Package Shape
TO-92-3
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
0.3 V
Maximum DC Collector Current
400 mA
Power Dissipation
500 mW
Gain Bandwidth Product fT
200 MHz
Package Style
Reel
Brand
onsemi
Continuous Collector Current
150 mA
DC Collector/Base Gain hfe Min
160
DC Current Gain hFE Max
560
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1500
Product Group
Transistors
Material
Silicon
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.016000 oz
USHTS
8541210075
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