2SC5501A-4-TR-E

Part Number: 2SC5501A-4-TR-E

SKU: 80146

Manufacturer: onsemi

Description: Bipolar Transistors - BJT MEDIUM OUTPUT AMPLIFIER

Rohs State: Need to verify

Free Sample Request: Request Free Samples

Availability: 97003 in stock

Delivery Date: 4-7 days

Call for pricing

Products specifications

Manufacturer(MFG)	onsemi
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	MCP-4
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	10 V
Collector- Base Voltage VCBO	20 V
Emitter- Base Voltage VEBO	2 V
Maximum DC Collector Current	70 mA
Power Dissipation	500 mW
Gain Bandwidth Product fT	7 GHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	2SC5501A
Package Style	Reel
Brand	onsemi
DC Collector/Base Gain hfe Min	90 at 20 mA, 5 V
DC Current Gain hFE Max	180 at 20 mA, 5 V
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
CNHTS	8541290000
CAHTS	8541210000
JPHTS	8541210101
KRHTS	8541219000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Material	Silicon
USHTS	8541210075

Your name

Your email

Enquiry

Products specifications

Manufacturer(MFG)	onsemi
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	MCP-4
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	10 V
Collector- Base Voltage VCBO	20 V
Emitter- Base Voltage VEBO	2 V
Maximum DC Collector Current	70 mA
Power Dissipation	500 mW
Gain Bandwidth Product fT	7 GHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	2SC5501A
Package Style	Reel
Brand	onsemi
DC Collector/Base Gain hfe Min	90 at 20 mA, 5 V
DC Current Gain hFE Max	180 at 20 mA, 5 V
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
CNHTS	8541290000
CAHTS	8541210000
JPHTS	8541210101
KRHTS	8541219000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Material	Silicon
USHTS	8541210075

Request For 2SC5501A-4-TR-E