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2SD1012G-SPA

Part Number: 2SD1012G-SPA
SKU: 190827
Manufacturer: onsemi
Description: Bipolar Transistors - BJT BIP NPN 0.7A 15V
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 30545 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) onsemi
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style Through Hole
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 15 V
Collector- Base Voltage VCBO 20 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 30 mV
Maximum DC Collector Current 0.7 A
Power Dissipation 250 mW
Gain Bandwidth Product fT 250 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 125 C
Series 2SD1012
Package Style Bulk
Brand onsemi
Continuous Collector Current 0.7 A
DC Collector/Base Gain hfe Min 160
DC Current Gain hFE Max 960
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 500
Product Group Transistors
Material Silicon
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210075
JPHTS 8541210101
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 110 g
TARIC 8541210000
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Products specifications
Manufacturer(MFG) onsemi
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style Through Hole
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 15 V
Collector- Base Voltage VCBO 20 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 30 mV
Maximum DC Collector Current 0.7 A
Power Dissipation 250 mW
Gain Bandwidth Product fT 250 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 125 C
Series 2SD1012
Package Style Bulk
Brand onsemi
Continuous Collector Current 0.7 A
DC Collector/Base Gain hfe Min 160
DC Current Gain hFE Max 960
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 500
Product Group Transistors
Material Silicon
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210075
JPHTS 8541210101
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 110 g
TARIC 8541210000
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