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SGR2N60UFDTM

Part Number: SGR2N60UFDTM
SKU: 259207
Manufacturer: onsemi / Fairchild
Description: IGBT Transistors Dis High Perf IGBT
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 15664 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) onsemi
Part Category IGBT Transistors
Material Silicon
Package Shape DPAK-3
Mounting Type Style SMD/SMT
Configuration Single
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2.1 V
Maximum Gate Emitter Voltage 20 V
Continuous Collector Current at 25 C 2.4 A
Power Dissipation 25 W
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Series SGR2N60
Package Style Reel
Brand onsemi / Fairchild
Continuous Collector Current 2.4 A
Continuous Collector Current Ic Max 2.4 A
Gate-Emitter Leakage Current +/- 100 nA
Height 2.3 mm
Length 6.6 mm
Product Type IGBT Transistors
Standard Pack Quantity 2500
Product Group IGBTs
Width 6.1 mm
MACRO NEO Part Number SGR2N60UFDTM_NL
CNHTS 8541290000
TARIC 8541290000
ECCN EAR99
Per Pcs Weight 0.012346 oz
USHTS 8541290095
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  • SGR2N60UFDTM IGBT Transistors
  • SGR2N60UFDTM onsemi / Fairchild
Products specifications
Manufacturer(MFG) onsemi
Part Category IGBT Transistors
Material Silicon
Package Shape DPAK-3
Mounting Type Style SMD/SMT
Configuration Single
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2.1 V
Maximum Gate Emitter Voltage 20 V
Continuous Collector Current at 25 C 2.4 A
Power Dissipation 25 W
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Series SGR2N60
Package Style Reel
Brand onsemi / Fairchild
Continuous Collector Current 2.4 A
Continuous Collector Current Ic Max 2.4 A
Gate-Emitter Leakage Current +/- 100 nA
Height 2.3 mm
Length 6.6 mm
Product Type IGBT Transistors
Standard Pack Quantity 2500
Product Group IGBTs
Width 6.1 mm
MACRO NEO Part Number SGR2N60UFDTM_NL
CNHTS 8541290000
TARIC 8541290000
ECCN EAR99
Per Pcs Weight 0.012346 oz
USHTS 8541290095
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