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SS8550DBU

Part Number: SS8550DBU
SKU: 15686
Manufacturer: onsemi / Fairchild
Description: Bipolar Transistors - BJT TO92 PNP 2W BULK
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 97761 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) onsemi
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style Through Hole
Package Shape TO-92-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max - 25 V
Collector- Base Voltage VCBO - 40 V
Emitter- Base Voltage VEBO - 6 V
Collector-Emitter Saturation Voltage - 0.28 V
Maximum DC Collector Current 1.5 A
Power Dissipation 1 W
Gain Bandwidth Product fT 200 MHz
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Series SS8550
Package Style Bulk
Brand onsemi / Fairchild
Continuous Collector Current - 1.5 A
DC Collector/Base Gain hfe Min 85
DC Current Gain hFE Max 300
Height 4.7 mm
Length 4.7 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 10000
Product Group Transistors
Material Silicon
Width 3.93 mm
MACRO NEO Part Number SS8550DBU_NL
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.006314 oz
USHTS 8541290075
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  • SS8550DBU Application
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  • SS8550DBU Bipolar Transistors - BJT
  • SS8550DBU onsemi / Fairchild
Products specifications
Manufacturer(MFG) onsemi
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style Through Hole
Package Shape TO-92-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max - 25 V
Collector- Base Voltage VCBO - 40 V
Emitter- Base Voltage VEBO - 6 V
Collector-Emitter Saturation Voltage - 0.28 V
Maximum DC Collector Current 1.5 A
Power Dissipation 1 W
Gain Bandwidth Product fT 200 MHz
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Series SS8550
Package Style Bulk
Brand onsemi / Fairchild
Continuous Collector Current - 1.5 A
DC Collector/Base Gain hfe Min 85
DC Current Gain hFE Max 300
Height 4.7 mm
Length 4.7 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 10000
Product Group Transistors
Material Silicon
Width 3.93 mm
MACRO NEO Part Number SS8550DBU_NL
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.006314 oz
USHTS 8541290075
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