0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

ZX3CD2S1M832TA

Part Number: ZX3CD2S1M832TA
SKU: 210815
Manufacturer: onsemi
Description: Bipolar Transistors - BJT
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 44454 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) onsemi
Part Category Bipolar Transistors - BJT
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max 20 V
Collector- Base Voltage VCBO 25 V
Emitter- Base Voltage VEBO 7.5 V
Maximum DC Collector Current 3.5 A
Power Dissipation 3000 mW
Gain Bandwidth Product fT 180 MHz
Operating Temperature(Max) + 150 C
Brand onsemi
DC Collector/Base Gain hfe Min 300 at 10 mA, 2 V
Product Type BJTs - Bipolar Transistors
Product Group Transistors
USHTS 8541290095
  • ZX3CD2S1M832TA Price
  • ZX3C Series
  • ZX3CD2S1M832TA Datasheet
  • ZX3CD2S1M832TA Application
  • ZX3CD2S1M832TA Pdf
  • ZX3CD2S1M832TA Pinout
  • ZX3CD2S1M832TA Image
  • ZX3CD2S1M832TA Picture
  • ZX3CD2S1M832TA In Stock
  • ZX3CD2S1M832TA Distributor
  • ZX3CD2S1M832TA Bipolar Transistors - BJT
  • ZX3CD2S1M832TA onsemi
Products specifications
Manufacturer(MFG) onsemi
Part Category Bipolar Transistors - BJT
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max 20 V
Collector- Base Voltage VCBO 25 V
Emitter- Base Voltage VEBO 7.5 V
Maximum DC Collector Current 3.5 A
Power Dissipation 3000 mW
Gain Bandwidth Product fT 180 MHz
Operating Temperature(Max) + 150 C
Brand onsemi
DC Collector/Base Gain hfe Min 300 at 10 mA, 2 V
Product Type BJTs - Bipolar Transistors
Product Group Transistors
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display