PJP4NA90_T0_00001

Part Number: PJP4NA90_T0_00001

SKU: 205817

Manufacturer: Panjit

Description: MOSFET PJ/P4NA90/TP//HF/0.05K/TO-220AB/MOS/TO/NFET-900CTMN//PJ/TO220AB-AS48/TO220AB-AS49/TO220AB-AS41

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 72268 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Panjit
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	TO-220AB-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	4 A
Rds On - Drain-Source Resistance	3.4 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	17 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	140 W
Channel Mode	Enhancement
Package Style	Tube
Brand	Panjit
Configuration	Single
Fall Time	29 ns
Product Type	MOSFET
Rise Time	27 ns
Series	NFET-900CTMN
Standard Pack Quantity	50
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	40 ns
Typical Turn-On Delay Time	15 ns
CNHTS	8541290000
TARIC	8541290000
ECCN	EAR99

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Products specifications

Manufacturer(MFG)	Panjit
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	TO-220AB-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	4 A
Rds On - Drain-Source Resistance	3.4 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	17 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	140 W
Channel Mode	Enhancement
Package Style	Tube
Brand	Panjit
Configuration	Single
Fall Time	29 ns
Product Type	MOSFET
Rise Time	27 ns
Series	NFET-900CTMN
Standard Pack Quantity	50
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	40 ns
Typical Turn-On Delay Time	15 ns
CNHTS	8541290000
TARIC	8541290000
ECCN	EAR99

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