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Part Number: 2SJ355-T1-AZ
SKU: 200730
Manufacturer: Renesas Electronics
Description: MOSFET
Rohs State: Need to verify
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Availability: 61930 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SC-62-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 2 A
Rds On - Drain-Source Resistance 350 mOhms
Vgs - Gate-Source Voltage - 20 V, + 10 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 130 ns
Height 1.6 mm
Length 2.5 mm
Product Type MOSFET
Rise Time 32 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 5.5 ns
CNHTS 8541290000
TARIC 8541290000
Width 4.5 mm
USHTS 8541290095
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SC-62-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 2 A
Rds On - Drain-Source Resistance 350 mOhms
Vgs - Gate-Source Voltage - 20 V, + 10 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 130 ns
Height 1.6 mm
Length 2.5 mm
Product Type MOSFET
Rise Time 32 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 5.5 ns
CNHTS 8541290000
TARIC 8541290000
Width 4.5 mm
USHTS 8541290095
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